radiative recombination
简明释义
辐射复合
英英释义
Radiative recombination is a process in which an electron and a hole combine to form a neutral atom or molecule, releasing energy in the form of a photon. | 辐射复合是指电子和空穴结合形成中性原子或分子的过程,伴随释放出以光子形式的能量。 |
例句
1.Researchers are exploring new materials that facilitate radiative recombination for more efficient solar cells.
研究人员正在探索能够促进辐射复合的新材料,以提高太阳能电池的效率。
2.The efficiency of light-emitting diodes (LEDs) is largely determined by the rate of radiative recombination.
发光二极管(LED)的效率在很大程度上取决于辐射复合的速率。
3.In semiconductor physics, radiative recombination refers to the process where an electron and a hole combine to emit a photon.
在半导体物理中,辐射复合指的是电子与空穴结合以发射光子的过程。
4.In photonic devices, enhancing radiative recombination can lead to brighter emission and improved performance.
在光子设备中,增强辐射复合可以导致更明亮的发射和更好的性能。
5.The phenomenon of radiative recombination is crucial for understanding the behavior of excitons in semiconductors.
理解半导体中激子的行为时,辐射复合现象至关重要。
作文
In the field of semiconductor physics, the phenomenon of radiative recombination plays a crucial role in determining the efficiency of devices such as light-emitting diodes (LEDs) and laser diodes. To understand this concept, we must first explore the basic principles of electron behavior in semiconductors. When an electron in the conduction band of a semiconductor loses energy, it can transition back to the valence band. This process is known as recombination. However, not all recombination events are the same. In the case of radiative recombination (辐射复合), the energy lost during this transition is emitted in the form of a photon, which is the fundamental particle of light.The significance of radiative recombination lies in its direct impact on the performance of optoelectronic devices. For instance, in LEDs, the efficiency of light emission is heavily dependent on the rate of radiative recombination. When electrons and holes recombine radiatively, they produce visible light, making the device functional. Conversely, if non-radiative processes dominate, such as Auger recombination or defect-related recombination, the energy is dissipated as heat rather than light, leading to reduced efficiency and performance.Moreover, the temperature of the semiconductor material can influence the rates of radiative recombination. As temperature increases, the likelihood of non-radiative recombination processes also increases, which can further lower the efficiency of devices operating at higher temperatures. This phenomenon presents a challenge for engineers and scientists who aim to optimize the performance of high-power LEDs and laser diodes.Another important aspect of radiative recombination is its dependence on the material properties of the semiconductor. Different semiconductor materials exhibit varying efficiencies of radiative recombination. For example, gallium arsenide (GaAs) has a higher probability of radiative recombination compared to silicon. This property makes GaAs a preferred material for many high-efficiency optoelectronic applications.In addition to its practical implications, radiative recombination also serves as a fundamental concept in understanding the behavior of excitons, which are bound states of electrons and holes. The study of excitons and their recombination processes can lead to advancements in new materials and technologies, such as organic photovoltaics and quantum dot solar cells. These emerging technologies harness the principles of radiative recombination to create more efficient energy conversion systems.In conclusion, radiative recombination (辐射复合) is a vital process in the realm of semiconductor physics that directly influences the efficiency of optoelectronic devices. Its implications extend beyond mere theoretical understanding, impacting the design and optimization of practical applications in technology. As research continues to evolve, understanding and harnessing the principles of radiative recombination will be essential in developing the next generation of efficient light sources and energy conversion systems.
在半导体物理领域,辐射复合现象在决定光发射二极管(LED)和激光二极管等设备的效率方面起着至关重要的作用。要理解这一概念,我们必须首先探索电子在半导体中行为的基本原理。当半导体中导带的电子失去能量时,它可以重新过渡回价带。这个过程被称为复合。然而,并不是所有的复合事件都是相同的。在辐射复合(radiative recombination)的情况下,电子在过渡期间失去的能量以光子的形式发射出来,而光子是光的基本粒子。辐射复合的重要性在于它对光电设备性能的直接影响。例如,在LED中,光发射的效率在很大程度上依赖于辐射复合的速率。当电子和空穴发生辐射复合时,它们产生可见光,使设备功能正常。相反,如果非辐射过程占主导地位,例如奥杰复合或缺陷相关复合,则能量将以热量而不是光的形式散失,从而导致效率和性能降低。此外,半导体材料的温度也会影响辐射复合的速率。随着温度的升高,非辐射复合过程的可能性也增加,这可能进一步降低高温下运行的设备的效率。这一现象给工程师和科学家带来了挑战,他们旨在优化高功率LED和激光二极管的性能。辐射复合的另一个重要方面是其对半导体材料属性的依赖。不同的半导体材料表现出不同的辐射复合效率。例如,砷化镓(GaAs)相比于硅具有更高的辐射复合概率。这一特性使得GaAs成为许多高效率光电应用的首选材料。除了实际应用的影响外,辐射复合还作为理解激子行为的基本概念。激子是电子和空穴的束缚态,研究激子及其复合过程可以推动新材料和技术的发展,例如有机光伏和量子点太阳能电池。这些新兴技术利用辐射复合的原理来创造更高效的能量转换系统。总之,辐射复合(辐射复合)是半导体物理领域中的一个重要过程,直接影响光电设备的效率。其影响超越了单纯的理论理解,影响着技术中实际应用的设计和优化。随着研究的不断发展,理解和利用辐射复合的原理对于开发下一代高效光源和能量转换系统至关重要。
相关单词