avalanche breakdown

简明释义

雪崩破坏

英英释义

例句

1.The semiconductor device failed due to an avalanche breakdown 雪崩击穿 at elevated temperatures.

由于在高温下发生了雪崩击穿，半导体设备发生了故障。

2.An avalanche breakdown 雪崩击穿 can occur in diodes when reverse voltage exceeds the breakdown voltage.

当反向电压超过击穿电压时，二极管可能会发生雪崩击穿。

3.Engineers must consider the risk of avalanche breakdown 雪崩击穿 when designing high-power circuits.

工程师在设计高功率电路时必须考虑雪崩击穿的风险。

4.The unexpected avalanche breakdown 雪崩击穿 led to a complete circuit failure during testing.

意外的雪崩击穿导致测试期间电路完全失效。

5.During the high voltage test, we observed an avalanche breakdown 雪崩击穿 that caused a sudden surge in current.

在高压测试中，我们观察到了一次雪崩击穿，导致电流突然激增。

作文

In the realm of physics and engineering, the term avalanche breakdown refers to a phenomenon that occurs in semiconductor devices, particularly when they are subjected to high voltages. This process is critical to understand, especially for those involved in electronics and electrical engineering. An avalanche breakdown happens when a small number of charge carriers gain enough energy from an electric field to collide with atoms in the semiconductor material, which results in the creation of additional charge carriers. This multiplication effect can lead to a sudden increase in current, potentially damaging the device if not properly managed.To illustrate this concept, consider a simple diode. Under normal operating conditions, a diode allows current to flow in one direction while blocking it in the opposite direction. However, if the reverse voltage exceeds a certain threshold, known as the breakdown voltage, the diode may enter a state of avalanche breakdown. At this point, the diode can no longer block the current, leading to a rapid rise in current flow that can cause overheating and eventual failure of the device.This phenomenon is not inherently negative; in fact, it is utilized in certain applications such as Zener diodes, which are designed to operate in the breakdown region. Zener diodes exploit the avalanche breakdown effect to provide voltage regulation in circuits. By allowing a controlled amount of current to pass through during breakdown, they maintain a stable output voltage, making them invaluable components in power supply circuits.Understanding avalanche breakdown is crucial for engineers and designers who work with electronic components. It highlights the importance of knowing the operational limits of devices and how they respond to extreme conditions. For instance, when designing circuits that involve high voltages, engineers must consider the potential for avalanche breakdown and implement protective measures, such as using components rated for higher voltages or incorporating fuses and circuit breakers to prevent damage.Moreover, the study of avalanche breakdown extends beyond just semiconductors. It can also be observed in other fields such as atmospheric physics, where similar principles apply to the formation of lightning. In this context, the breakdown of air molecules under high electric fields leads to a rapid discharge of electricity, akin to the behavior seen in semiconductor devices. Thus, the concept of avalanche breakdown serves as a bridge between various scientific disciplines, illustrating the interconnectedness of physical phenomena.In conclusion, the understanding of avalanche breakdown is essential for anyone involved in the design and application of electronic devices. It not only provides insight into the behavior of materials under stress but also emphasizes the importance of safety and reliability in engineering practices. As technology continues to advance, the implications of avalanche breakdown will remain relevant, guiding innovations in semiconductor technology and beyond.

在物理和工程领域，术语雪崩击穿指的是一种现象，发生在半导体器件中，尤其是在它们受到高电压的影响时。了解这一过程至关重要，特别是对于那些从事电子和电气工程的人来说。雪崩击穿发生在少量电荷载流子获得足够的能量以通过电场与半导体材料中的原子碰撞，从而产生额外的电荷载流子。这种倍增效应可能导致电流的突然增加，如果没有适当的管理，可能会损坏设备。为了说明这一概念，可以考虑一个简单的二极管。在正常工作条件下，二极管允许电流朝一个方向流动，同时阻止反方向的电流。然而，如果反向电压超过某个阈值，称为击穿电压，二极管可能会进入雪崩击穿状态。在这一点上，二极管将无法阻挡电流，导致电流迅速上升，可能造成过热并最终损坏设备。这种现象并不一定是负面的；实际上，它在某些应用中得到了利用，例如齐纳二极管，这种二极管被设计用来在击穿区域工作。齐纳二极管利用雪崩击穿效应在电路中提供电压调节。通过在击穿期间允许控制量的电流通过，它们保持稳定的输出电压，使其成为电源电路中不可或缺的组件。理解雪崩击穿对从事电子元件工作的工程师和设计师至关重要。它突显了了解设备操作极限及其如何应对极端条件的重要性。例如，在设计涉及高电压的电路时，工程师必须考虑雪崩击穿的潜在可能性，并实施保护措施，例如使用额定电压更高的组件或加入保险丝和断路器以防止损坏。此外，雪崩击穿的研究不仅限于半导体。它还可以在其他领域观察到，例如大气物理学，其中类似的原理适用于闪电的形成。在这个背景下，空气分子在高电场下的击穿导致电力的快速释放，这与半导体器件中的行为相似。因此，雪崩击穿的概念在各种科学学科之间架起了一座桥梁，展示了物理现象的相互关联性。总之，理解雪崩击穿对任何参与电子设备设计和应用的人都至关重要。它不仅提供了对材料在压力下行为的洞察，还强调了工程实践中安全性和可靠性的重要性。随着技术的不断进步，雪崩击穿的影响将继续相关，引导半导体技术及其他领域的创新。