giant magnetoresistance

简明释义

巨磁电阻;

英英释义

Giant magnetoresistance (GMR) is a quantum mechanical phenomenon observed in multilayered structures, where the electrical resistance of a material changes significantly in response to an applied magnetic field.

巨磁阻效应(GMR)是一种在多层结构中观察到的量子力学现象,其中材料的电阻在施加磁场时显著变化。

例句

1.The application of giant magnetoresistance has led to significant advancements in magnetic sensors.

巨磁阻效应的应用推动了磁传感器的重大进展。

2.Devices based on giant magnetoresistance can operate at much lower power levels.

基于巨磁阻效应的设备可以在更低的功率水平下运行。

3.The principle of giant magnetoresistance is utilized in modern hard drives to increase their storage capacity.

现代硬盘利用巨磁阻效应的原理来增加存储容量。

4.The discovery of giant magnetoresistance revolutionized the field of data storage technology.

巨磁阻效应的发现彻底改变了数据存储技术领域。

5.Researchers are exploring new materials to enhance giant magnetoresistance in future applications.

研究人员正在探索新材料,以增强未来应用中的巨磁阻效应

作文

In the world of modern physics and material science, the phenomenon known as giant magnetoresistance has emerged as a groundbreaking discovery that has significantly impacted the fields of data storage and magnetic sensors. The term giant magnetoresistance refers to a large change in electrical resistance observed in certain materials when exposed to a magnetic field. This effect was first discovered in the late 1980s by physicists Albert Fert and Peter Grünberg, who later received the Nobel Prize in Physics for their work on this phenomenon.The principle behind giant magnetoresistance is based on the behavior of electrons in ferromagnetic materials. When a magnetic field is applied, the spin of the electrons aligns with the magnetic field, resulting in a significant alteration in the material's resistance. This change can be several orders of magnitude greater than the conventional magnetoresistance seen in normal materials. Such a dramatic change in resistance makes giant magnetoresistance particularly useful in various applications, especially in the realm of hard disk drives (HDDs) and other data storage devices.One of the most notable applications of giant magnetoresistance is in the development of read heads for hard drives. The ability to detect minute changes in resistance allows these read heads to sense the magnetic fields of tiny bits of data stored on the disk. As a result, HDDs have become increasingly efficient and capable of storing vast amounts of data in compact formats. This advancement has played a crucial role in the exponential growth of digital data storage over the past few decades.Moreover, giant magnetoresistance has also paved the way for advancements in magnetic sensors used in various technologies, including automotive systems, consumer electronics, and medical devices. For instance, magnetic field sensors that utilize giant magnetoresistance can detect the position, speed, and direction of moving objects with remarkable precision. This capability is vital in applications such as anti-lock braking systems in vehicles and motion detection in smartphones.The impact of giant magnetoresistance extends beyond just practical applications; it has also opened new avenues for research in condensed matter physics. Scientists continue to explore the underlying mechanisms of this phenomenon, leading to the discovery of new materials and potential applications in spintronics—a field that seeks to exploit the intrinsic spin of electrons for information processing.In conclusion, giant magnetoresistance stands as a testament to the profound connection between fundamental physics and technological innovation. Its discovery has not only transformed the landscape of data storage but has also inspired ongoing research into new materials and applications. As we continue to harness the power of giant magnetoresistance, we can expect further advancements that will shape the future of technology, making it an exciting area of study for both scientists and engineers alike.

在现代物理学和材料科学的世界中,现象称为巨磁阻效应giant magnetoresistance)已成为一项突破性的发现,对数据存储和磁传感器领域产生了重大影响。术语巨磁阻效应指的是在某些材料暴露于磁场时观察到的电阻的大幅变化。这一效应最早在1980年代末由物理学家阿尔贝·费尔特和彼得·格伦伯格发现,他们因对这一现象的研究而获得了诺贝尔物理学奖。巨磁阻效应的原理基于电子在铁磁材料中的行为。当施加磁场时,电子的自旋与磁场对齐,从而导致材料电阻的显著变化。这种变化可比普通材料中观察到的常规磁阻效应大几个数量级。如此剧烈的电阻变化使得巨磁阻效应在各种应用中尤为有用,特别是在硬盘驱动器(HDD)和其他数据存储设备领域。巨磁阻效应最显著的应用之一是硬盘驱动器读取头的开发。能够检测微小的电阻变化使这些读取头能够感知磁盘上存储的微小数据位的磁场。因此,HDD变得越来越高效,并能够以紧凑的格式存储大量数据。这一进步在过去几十年中对数字数据存储的指数增长发挥了至关重要的作用。此外,巨磁阻效应还为各种技术中使用的磁传感器的进步铺平了道路,包括汽车系统、消费电子产品和医疗设备。例如,利用巨磁阻效应的磁场传感器可以以惊人的精度检测移动物体的位置、速度和方向。这种能力在汽车的防抱死制动系统和智能手机的运动检测等应用中至关重要。巨磁阻效应的影响不仅限于实际应用;它还为凝聚态物理学的研究开辟了新的途径。科学家们继续探索这一现象的基本机制,从而发现新材料并在自旋电子学领域寻找潜在应用——一个旨在利用电子自旋进行信息处理的领域。总之,巨磁阻效应证明了基础物理学与技术创新之间深刻的联系。它的发现不仅改变了数据存储的格局,还激励着对新材料和应用的持续研究。随着我们继续利用巨磁阻效应的力量,我们可以期待进一步的进展,这将塑造技术的未来,使其成为科学家和工程师都感兴趣的激动人心的研究领域。