photoresist

简明释义

[ˌfəʊtəʊrɪˈzɪst][ˌfoʊtoʊrɪˈzɪst]

n. [电子] 光刻胶;[印刷] 光致抗蚀剂;[光] 光阻材料

英英释义

A light-sensitive material used in processes such as photolithography to form a patterned coating on a surface.

一种光敏材料,用于光刻等工艺中,在表面形成图案涂层。

单词用法

positive photoresist

正光刻胶

negative photoresist

负光刻胶

photoresist coating

光刻胶涂层

photoresist exposure

光刻胶曝光

spin-coating photoresist

旋涂光刻胶

etching through photoresist

通过光刻胶蚀刻

photoresist removal

光刻胶去除

photoresist thickness

光刻胶厚度

同义词

light-sensitive material

光敏材料

The light-sensitive material is crucial for photolithography processes.

光敏材料在光刻工艺中至关重要。

photosensitive resin

光敏树脂

Photosensitive resin is often used in the production of printed circuit boards.

光敏树脂常用于印刷电路板的生产。

photoactive polymer

光活性聚合物

Photoactive polymers are essential in developing advanced optical devices.

光活性聚合物在开发先进光学设备中是必不可少的。

反义词

photoactive material

光敏材料

Photoactive materials are used in various applications, including sensors and imaging devices.

光敏材料被广泛用于传感器和成像设备等各种应用中。

opaque material

不透明材料

Opaque materials do not allow light to pass through, making them suitable for privacy screens.

不透明材料不允许光线通过,适合用于隐私屏幕。

例句

1.The effects of the photoresist film overlays on the propagation of modes in glass planar optical waveguides by silver-ion exchange are measured.

测量并归纳了负胶介质薄层对银离子交换玻璃平面波导传播特性影响的实验趋势。

2.We developed a non silicon surface micro machining process with two or three mask electroplating layers and using polyimide or photoresist as sacrificial layers.

我们研制的非硅表面微机械工艺采用两次或三次掩模电镀层,聚酰亚胺和光刻胶分别作为底层和第二、第三层的牺牲层。

3.Photoresist coating preparation and baking; Thin film preparation.

光刻胶的旋涂与烘烤,薄膜材料制备。

4.The results show that the technology of melting photoresist is a simple and practical technology of fabricating microlens array.

结果表明,光刻胶热熔技术是一种简单、实用的微透镜阵列制作技术。

5.Researches on the two-photon photopolymerization technology of SU8 negative photoresist have been processed.

飞秒激光su8负性光刻胶双光子聚合工艺研究。

6.This paper analyses the blocking voltage, forward voltage drop, photoresist mask design and gate-triggering and dynamic characteristics of high-power thyristors.

本文对大功率可控硅的阻断电压问题、正向压降问题、光刻掩模板的设计问题、控制极特性问题以及动特性问题进行了分析。

7.With the protection of photoresist sidewall, the emitter passivation ledge is fabricated by wet etch.

利用光刻胶形成保护侧墙,用湿法腐蚀来形成发射极钝化边沿。

8.No back plate growing method is to electroform metal microstructure on the metal substrate directly by low-cost UV-LIGA technology based on SU-8 photoresist.

无背板生长法是利用SU - 8光刻胶,通过低成本的UV -LIGA技术,直接在金属基板上电铸镍图形来实现的。

9.Different types of photoresist are used for positive and negative lithography.

不同类型的光刻胶用于正向和负向光刻。

10.After exposure to UV light, the photoresist undergoes a chemical change that allows for selective etching.

经过紫外线照射后,光刻胶发生化学变化,从而允许选择性蚀刻。

11.The thickness of the photoresist layer can significantly affect the resolution of the printed patterns.

在打印图案时,光刻胶层的厚度会显著影响分辨率。

12.The semiconductor industry relies heavily on photoresist to create intricate circuit patterns on silicon wafers.

半导体行业在硅晶圆上创建复杂电路图案时严重依赖光刻胶

13.During the photolithography process, a layer of photoresist is applied to the substrate.

在光刻工艺中,一层光刻胶被施加到基材上。

作文

In the world of microfabrication and semiconductor manufacturing, the term photoresist refers to a light-sensitive material used to form a patterned coating on a substrate. This process is crucial in creating intricate designs on silicon wafers, which are the foundation of modern electronics. The use of photoresist allows engineers to define specific areas that will undergo further processing, such as etching or doping, thereby enabling the production of complex integrated circuits.The process begins with the application of a layer of photoresist onto the surface of a silicon wafer. This layer is typically very thin, often only a few micrometers thick. Once the photoresist is applied, the wafer is exposed to ultraviolet (UV) light through a photomask, which contains the desired pattern. The UV light interacts with the photoresist, causing a chemical change in the exposed areas. Depending on the type of photoresist used, this can either make the exposed areas soluble or insoluble in the developer solution that follows.After exposure, the wafer is developed using a suitable solvent that washes away either the exposed or unexposed regions of the photoresist. This step reveals the underlying substrate in a precise pattern, allowing for subsequent processes like etching to occur only in the designated areas. The ability to create such patterns with high precision is what makes photoresist essential in the production of microchips, where thousands of tiny features must be accurately placed within a very small area.Furthermore, the choice of photoresist material can greatly influence the outcome of the fabrication process. There are two main types of photoresist: positive and negative. Positive photoresist becomes soluble when exposed to light, while negative photoresist becomes insoluble. Each type has its advantages and is selected based on the specific requirements of the project at hand. For instance, positive photoresist is often preferred for applications requiring fine resolution, whereas negative photoresist may be chosen for its better adhesion properties.The development of photoresist technology has progressed significantly over the years, with advancements leading to the creation of new materials that offer improved performance. These innovations have allowed the semiconductor industry to keep pace with the ever-increasing demand for smaller, faster, and more efficient electronic devices. As technology continues to evolve, the role of photoresist remains pivotal in pushing the boundaries of what is possible in microelectronics.In conclusion, photoresist is a fundamental component in the realm of semiconductor manufacturing. Its ability to create precise patterns on silicon wafers is indispensable for the production of modern electronic devices. As we look towards the future, the ongoing research and development in photoresist materials and processes will undoubtedly play a critical role in shaping the next generation of technology. Understanding the significance of photoresist not only highlights its importance in the manufacturing process but also underscores the intricate relationship between materials science and engineering in the quest for innovation.

在微加工和半导体制造的世界中,术语光刻胶指的是一种光敏材料,用于在基材上形成图案化涂层。这个过程对于在硅晶圆上创建复杂设计至关重要,而硅晶圆是现代电子产品的基础。使用光刻胶可以让工程师定义将要进行进一步处理的特定区域,例如蚀刻或掺杂,从而实现复杂集成电路的生产。这个过程始于将一层光刻胶涂覆在硅晶圆的表面。这层涂层通常非常薄,厚度往往只有几微米。一旦涂覆了光刻胶,晶圆就会通过光掩模暴露在紫外线(UV)光下,光掩模包含所需的图案。紫外线光与光刻胶相互作用,导致暴露区域发生化学变化。根据所使用的光刻胶类型,这可能使暴露区域在后续的显影溶液中可溶或不可溶。曝光后,晶圆使用适当的溶剂进行显影,洗去暴露或未暴露的光刻胶区域。这一步骤以精确的图案揭示底层基材,从而允许后续的蚀刻等过程仅在指定区域进行。能够以高精度创建这样的图案正是光刻胶在微芯片生产中必不可少的原因,因为数千个微小特征必须在非常小的区域内准确放置。此外,光刻胶材料的选择对制造过程的结果有很大影响。主要有两种类型的光刻胶:正型和负型。正型光刻胶在曝光时变得可溶,而负型光刻胶则变得不可溶。每种类型都有其优点,并根据项目的具体要求进行选择。例如,正型光刻胶通常更适合需要精细分辨率的应用,而负型光刻胶可能因其更好的附着特性而被选择。光刻胶技术的发展在近年来取得了显著进展,随着新材料的出现,性能得到了改善。这些创新使半导体行业能够跟上对更小、更快和更高效的电子设备日益增长的需求。随着技术的不断发展,光刻胶的作用在推动微电子领域的可能性边界方面仍然至关重要。总之,光刻胶是半导体制造领域的基本组成部分。它在硅晶圆上创建精确图案的能力对现代电子设备的生产是不可或缺的。展望未来,光刻胶材料和工艺的持续研究与开发无疑将在塑造下一代技术中发挥关键作用。理解光刻胶的重要性不仅突显了它在制造过程中的重要性,还强调了材料科学与工程之间在创新追求中的微妙关系。