band-gap transition

简明释义

带隙跃迁;

英英释义

例句

1.Researchers observed a significant band-gap transition 带隙跃迁 when the material was doped with impurities.

研究人员观察到，当材料掺杂杂质时，发生了显著的带隙跃迁。

2.The study focused on the effects of temperature on the band-gap transition 带隙跃迁 in semiconductors.

这项研究集中于温度对半导体中带隙跃迁的影响。

3.In this experiment, we measured the light absorption associated with the band-gap transition 带隙跃迁.

在这个实验中，我们测量了与带隙跃迁相关的光吸收。

4.Understanding the band-gap transition 带隙跃迁 is crucial for developing efficient solar cells.

理解带隙跃迁对于开发高效太阳能电池至关重要。

5.The band-gap transition 带隙跃迁 can be influenced by external electric fields.

外部电场可以影响带隙跃迁。

作文

The concept of a band-gap transition is fundamental in the field of solid-state physics and materials science. It refers to the process by which an electron moves from the valence band to the conduction band in a semiconductor or insulator, overcoming the energy barrier known as the band gap. This phenomenon is crucial for understanding how materials conduct electricity and how they can be manipulated for various applications, such as in transistors, solar cells, and light-emitting diodes (LEDs).In semiconductors, the band gap is the energy difference between the highest energy electrons in the valence band and the lowest energy states in the conduction band. When an external energy source, such as heat or light, is applied to the material, electrons can absorb this energy and become excited. If the energy absorbed is greater than the band gap energy, the electrons can transition to the conduction band, resulting in a band-gap transition. This transition allows the material to conduct electricity, as the electrons in the conduction band are free to move and carry charge.The size of the band gap is a critical factor that determines the electrical and optical properties of a material. For instance, materials with a small band gap can easily undergo band-gap transitions at room temperature, making them suitable for applications like photodetectors and infrared sensors. On the other hand, materials with a large band gap require higher energy inputs for electrons to achieve a band-gap transition, which makes them useful for high-temperature applications and insulators.Understanding band-gap transitions also plays a significant role in the development of new materials. Researchers are constantly exploring ways to engineer band gaps in materials to optimize their performance for specific applications. For example, in photovoltaic cells, the efficiency of converting sunlight into electricity is heavily influenced by the band gap of the semiconductor used. An optimal band gap can maximize the absorption of sunlight and enhance the overall energy conversion efficiency.Moreover, the band-gap transition is not limited to semiconductors; it also occurs in insulators and some metals under certain conditions. In insulators, the band gap is typically much larger, which prevents electrons from easily transitioning to the conduction band. However, when subjected to extreme conditions, such as high temperatures or strong electric fields, even insulators can exhibit band-gap transitions, leading to conductive behavior.In conclusion, the band-gap transition is a key concept that underpins much of modern electronics and optoelectronics. By understanding how and why these transitions occur, scientists and engineers can develop new technologies and improve existing ones. As we continue to explore the properties of materials at the atomic level, the significance of band-gap transitions will only grow, paving the way for innovative solutions in energy, communication, and beyond.

带隙跃迁的概念在固态物理和材料科学领域中是基础性的。它指的是电子从半导体或绝缘体的价带移动到导带的过程，克服被称为带隙的能量障碍。这一现象对于理解材料如何导电以及如何为各种应用（如晶体管、太阳能电池和发光二极管（LED））进行操控至关重要。在半导体中，带隙是价带中最高能量电子与导带中最低能量状态之间的能量差。当施加外部能量源（如热量或光）时，材料中的电子可以吸收这些能量并激发。如果吸收的能量大于带隙能量，电子就可以过渡到导带，从而导致带隙跃迁。这一跃迁使材料能够导电，因为导带中的电子可以自由移动并携带电荷。带隙的大小是决定材料电气和光学特性的关键因素。例如，具有小带隙的材料可以在室温下轻易地发生带隙跃迁，使其适合用于光电探测器和红外传感器等应用。另一方面，具有大带隙的材料需要更高的能量输入才能实现带隙跃迁，这使它们适用于高温应用和绝缘体。理解带隙跃迁在新材料的发展中也起着重要作用。研究人员不断探索工程化材料中的带隙的方法，以优化其在特定应用中的性能。例如，在光伏电池中，将阳光转化为电能的效率在很大程度上受到所用半导体的带隙影响。最佳带隙可以最大化阳光的吸收，提高整体能量转换效率。此外，带隙跃迁不仅限于半导体；在某些条件下，绝缘体和一些金属也会发生这种现象。在绝缘体中，带隙通常要大得多，这阻止了电子轻易地过渡到导带。然而，当受到极端条件（如高温或强电场）的影响时，即使是绝缘体也可以表现出带隙跃迁，导致导电行为。总之，带隙跃迁是现代电子学和光电电子学的关键概念。通过理解这些跃迁是如何以及为何发生的，科学家和工程师可以开发新技术并改善现有技术。随着我们继续在原子层面探索材料的性质，带隙跃迁的重要性只会增加，为能源、通信等领域的创新解决方案铺平道路。