avalanche breakdown

简明释义

雪崩击穿;

英英释义

例句

1.During the experiment, we observed an unexpected avalanche breakdown 雪崩击穿 at lower voltages than predicted.

在实验过程中，我们观察到意外的avalanche breakdown 雪崩击穿发生在比预测的低电压下。

2.In semiconductor physics, an avalanche breakdown 雪崩击穿 can lead to device failure if not properly managed.

在半导体物理中，如果管理不当，avalanche breakdown 雪崩击穿可能导致设备故障。

3.Understanding avalanche breakdown 雪崩击穿 is crucial for designing safe electrical circuits.

理解avalanche breakdown 雪崩击穿对设计安全的电路至关重要。

4.The researchers studied the conditions under which avalanche breakdown 雪崩击穿 happens in different materials.

研究人员研究了不同材料中发生avalanche breakdown 雪崩击穿的条件。

5.The electrical engineer explained that an avalanche breakdown 雪崩击穿 occurs when a high voltage causes a sudden increase in current.

电气工程师解释说，当高电压导致电流突然增加时，会发生avalanche breakdown 雪崩击穿。

作文

In the realm of physics and engineering, the term avalanche breakdown refers to a phenomenon where a small increase in voltage leads to a dramatic increase in current. This process is particularly significant in semiconductor devices, where it can lead to device failure if not properly managed. Understanding avalanche breakdown is crucial for engineers who design and work with electronic components, as it can affect the reliability and performance of these devices.To illustrate the concept of avalanche breakdown, consider a simple diode. When a reverse voltage is applied to a diode, it typically blocks current flow. However, if this reverse voltage exceeds a certain threshold, known as the breakdown voltage, the diode begins to conduct electricity in the reverse direction. This is where avalanche breakdown occurs. The initial charge carriers (electrons and holes) gain enough energy from the electric field to collide with other atoms, creating more charge carriers. This chain reaction results in a rapid increase in current, which can lead to overheating and eventual failure of the diode if the power is not dissipated adequately.The implications of avalanche breakdown extend beyond just individual components; they also impact entire circuits. For example, in power supply circuits, engineers must take into account the possibility of avalanche breakdown when designing protection mechanisms. This could involve using components that can withstand high voltage spikes or implementing circuit designs that limit the maximum voltage applied to sensitive components.Moreover, avalanche breakdown is not always undesirable. In some applications, such as avalanche photodiodes, this phenomenon is harnessed to create highly sensitive light detectors. In these devices, the controlled avalanche breakdown allows for the amplification of the signal generated by incoming photons, making them extremely effective for applications in fiber optics and telecommunications.In summary, avalanche breakdown is a critical concept in the fields of electronics and materials science. It illustrates the delicate balance between voltage and current in semiconductor devices and highlights the importance of understanding material properties and behaviors under different electrical conditions. Engineers must be well-versed in this phenomenon to ensure the reliability and efficiency of their designs. As technology continues to advance, the knowledge of avalanche breakdown will remain essential for developing new and innovative electronic solutions.

在物理和工程领域，“雪崩击穿”一词指的是一种现象，其中电压的小幅增加会导致电流的剧烈增加。这个过程在半导体器件中尤为重要，如果管理不当，可能导致设备故障。理解雪崩击穿对设计和使用电子元件的工程师至关重要，因为它会影响这些设备的可靠性和性能。为了说明雪崩击穿的概念，考虑一个简单的二极管。当对二极管施加反向电压时，它通常会阻止电流流动。然而，如果这个反向电压超过某个阈值，即击穿电压，二极管就开始在反向方向导电。这就是雪崩击穿发生的地方。初始的载流子（电子和空穴）在电场中获得足够的能量，与其他原子碰撞，从而产生更多的载流子。这种连锁反应导致电流的快速增加，如果没有适当地散热，可能导致二极管过热和最终故障。雪崩击穿的影响不仅限于单个组件；它们还影响整个电路。例如，在电源电路中，工程师必须考虑在设计保护机制时可能发生的雪崩击穿。这可能涉及使用能够承受高电压尖峰的组件，或实施限制施加于敏感组件的最大电压的电路设计。此外，雪崩击穿并不总是不可取的。在一些应用中，例如雪崩光电二极管，这种现象被利用来创建高度灵敏的光探测器。在这些设备中，受控的雪崩击穿使得来自入射光子的信号得以放大，使其在光纤和电信应用中极为有效。总之，雪崩击穿是电子和材料科学领域中的一个关键概念。它说明了半导体器件中电压与电流之间的微妙平衡，并突显了在不同电气条件下理解材料特性和行为的重要性。工程师必须精通这一现象，以确保其设计的可靠性和效率。随着技术的不断进步，对雪崩击穿的知识将继续对开发新的创新电子解决方案至关重要。