excess minority carrier

简明释义

过剩少数载流子

英英释义

例句

1.In high electric fields, the recombination rate of excess minority carriers 过量少数载流子 increases significantly.

在高电场中，过量少数载流子的复合速率显著增加。

2.The lifetime of excess minority carriers 过量少数载流子 is crucial for the efficiency of solar cells.

对于太阳能电池来说，过量少数载流子的寿命对效率至关重要。

3.When light is absorbed in a semiconductor, it creates excess minority carriers 过量少数载流子 that contribute to current flow.

当光被半导体吸收时，会产生有助于电流流动的过量少数载流子。

4.In a p-n junction, the generation of excess minority carriers 过量少数载流子 can lead to improved conductivity.

在p-n结中，过量少数载流子的产生可以提高导电性。

5.The diffusion of excess minority carriers 过量少数载流子 affects the performance of bipolar transistors.

过量少数载流子的扩散影响双极晶体管的性能。

作文

In the field of semiconductor physics, understanding the concept of excess minority carrier is crucial for grasping how electronic devices function. A semiconductor is a material that has electrical conductivity between that of a conductor and an insulator. When a semiconductor is doped with impurities, it can create either an n-type or p-type material. In n-type semiconductors, the majority carriers are electrons, while the minority carriers are holes. Conversely, in p-type semiconductors, the majority carriers are holes and the minority carriers are electrons. The term excess minority carrier refers to the additional minority carriers that are generated within the semiconductor due to external influences, such as light exposure or thermal excitation.When light is absorbed by a semiconductor, it can excite electrons from the valence band to the conduction band, creating electron-hole pairs. This process leads to an increase in the number of minority carriers present in the material. For instance, in an n-type semiconductor, when light is shone on it, additional holes (the minority carriers) are created, resulting in an excess minority carrier concentration. This phenomenon plays a significant role in the operation of devices such as photodetectors and solar cells, where the generation of electron-hole pairs is essential for their functionality.The presence of excess minority carriers can significantly affect the electrical properties of a semiconductor. For example, an increase in minority carrier concentration can lead to a decrease in the material's resistivity, enhancing its conductivity. However, if the concentration of these carriers becomes too high, it can result in recombination processes, where electrons and holes annihilate each other. This recombination can limit the efficiency of devices like solar cells, where maximizing the lifetime of these carriers is critical for optimal performance.To analyze the behavior of excess minority carriers, scientists often use mathematical models such as the continuity equation, which describes the change in carrier density over time and space. This equation takes into account generation and recombination rates, allowing researchers to predict how excess minority carriers will behave under various conditions. Understanding these dynamics is essential for improving the design and efficiency of semiconductor devices.In summary, the concept of excess minority carrier is vital in semiconductor physics, particularly in the study and development of electronic devices. By comprehending how these carriers are generated and how they influence the properties of semiconductors, engineers and scientists can innovate and enhance the performance of technologies that rely on these materials. The ongoing research in this area continues to drive advancements in fields such as renewable energy, electronics, and optoelectronics, making the understanding of excess minority carriers not just an academic pursuit but a practical necessity in today's technology-driven world.

在半导体物理领域，理解过量少数载流子的概念对于掌握电子设备的功能至关重要。半导体是一种电导率介于导体和绝缘体之间的材料。当半导体掺杂杂质时，可以形成n型或p型材料。在n型半导体中，主要载流子是电子，而少数载流子是孔。相反，在p型半导体中，主要载流子是孔，少数载流子是电子。术语过量少数载流子指的是由于外部影响（如光照或热激发）而在半导体中产生的额外少数载流子。当光被半导体吸收时，它可以将电子从价带激发到导带，从而产生电子-孔对。这个过程导致材料中少数载流子的数量增加。例如，在n型半导体中，当光照射到其上时，会产生额外的孔（少数载流子），导致过量少数载流子浓度的增加。这一现象在光电探测器和太阳能电池等设备的操作中起着重要作用，这些设备的功能依赖于电子-孔对的生成。过量少数载流子的存在会显著影响半导体的电气特性。例如，少数载流子浓度的增加可能导致材料电阻率的降低，从而增强其导电性。然而，如果这些载流子的浓度过高，可能会导致复合过程，即电子和孔彼此湮灭。这种复合可能限制太阳能电池等设备的效率，在这些设备中，最大化这些载流子的寿命对于最佳性能至关重要。为了分析过量少数载流子的行为，科学家们通常使用数学模型，如连续性方程，该方程描述了载流子密度随时间和空间的变化。该方程考虑了生成和复合速率，使研究人员能够预测过量少数载流子在各种条件下的行为。理解这些动态对于改善半导体设备的设计和效率至关重要。总之，过量少数载流子的概念在半导体物理学中至关重要，特别是在电子设备的研究和开发中。通过理解这些载流子是如何生成的以及它们如何影响半导体的特性，工程师和科学家可以创新并提升依赖这些材料的技术的性能。该领域的持续研究继续推动可再生能源、电子和光电子等领域的进步，使得对过量少数载流子的理解不仅是学术追求，更是当今技术驱动世界中的实际必要性。