schottky vacancy

简明释义

肖特基缺陷

英英释义

例句

1.In ionic crystals, the formation of a schottky vacancy 肖特基空位 can significantly affect their electrical properties.

在离子晶体中，schottky vacancy 肖特基空位 的形成会显著影响其电学性质。

2.The concentration of schottky vacancies 肖特基空位 increases with temperature, leading to higher ionic conductivity.

随着温度的升高，schottky vacancies 肖特基空位 的浓度增加，从而导致更高的离子导电性。

3.Researchers are studying the role of schottky vacancies 肖特基空位 in the diffusion mechanisms of solid electrolytes.

研究人员正在研究 schottky vacancies 肖特基空位 在固体电解质扩散机制中的作用。

4.The presence of schottky vacancies 肖特基空位 can lead to decreased mechanical strength in materials.

存在 schottky vacancies 肖特基空位 可能导致材料的机械强度降低。

5.In semiconductors, schottky vacancies 肖特基空位 contribute to the generation of free charge carriers.

在半导体中，schottky vacancies 肖特基空位 有助于自由载流子的产生。

作文

In the field of solid-state physics and materials science, understanding defects in crystalline structures is crucial for predicting material properties. One significant type of defect is the schottky vacancy, which occurs when an atom or ion is missing from its lattice position in a crystal. This phenomenon is particularly important in ionic solids, where vacancies can significantly affect the electrical and thermal conductivity of the material. The schottky vacancy is named after the German physicist Walter Schottky, who studied these types of defects extensively in the early 20th century.A schottky vacancy typically involves the simultaneous absence of both a cation and an anion from the crystal lattice. For example, in a sodium chloride (NaCl) crystal, a schottky vacancy would consist of the removal of one sodium ion (Na+) and one chloride ion (Cl-). This creates a pair of vacancies that helps to maintain charge neutrality in the crystal, as the overall charge remains balanced despite the missing ions.The formation of schottky vacancies is influenced by temperature; as the temperature increases, the number of vacancies typically increases as well. This is due to the increased thermal energy that allows atoms to escape their lattice positions more easily. The concentration of schottky vacancies can be described by the Arrhenius equation, which relates the vacancy concentration to temperature and the formation energy of the vacancies. Understanding this relationship is essential for applications in semiconductor technology, where controlling the density of vacancies can optimize the performance of materials.Moreover, schottky vacancies play a vital role in diffusion processes within solids. When atoms move through a crystalline structure, they often jump into adjacent vacancies. This mechanism is known as vacancy diffusion and is critical for processes such as sintering in ceramics and the behavior of metals at high temperatures. The presence of schottky vacancies can enhance the mobility of atoms, thereby affecting the mechanical properties of materials.In addition to their impact on diffusion and conductivity, schottky vacancies are also relevant in the context of radiation damage in materials. When materials are exposed to high-energy radiation, such as neutrons or gamma rays, schottky vacancies can form as a result of the displacement of atoms from their lattice sites. This can lead to changes in the structural integrity and performance of materials used in nuclear reactors or space applications.In conclusion, the study of schottky vacancies provides valuable insights into the behavior of materials at the atomic level. Their influence on properties such as conductivity, diffusion, and resistance to radiation damage highlights the importance of understanding these defects in various applications. As technology continues to advance, further research into schottky vacancies will undoubtedly lead to improved materials and innovative solutions across multiple fields of science and engineering.

在固态物理和材料科学领域，理解晶体结构中的缺陷对于预测材料属性至关重要。其中一个重要的缺陷类型是肖特基空位，它发生在晶体中一个原子或离子缺失其晶格位置时。这种现象在离子固体中尤为重要，因为空位会显著影响材料的电导率和热导率。肖特基空位以德国物理学家瓦尔特·肖特基的名字命名，他在20世纪初对这些类型的缺陷进行了广泛研究。肖特基空位通常涉及阳离子和阴离子同时缺失的情况。例如，在氯化钠（NaCl）晶体中，一个肖特基空位将由一个钠离子（Na+）和一个氯离子（Cl-）的去除组成。这形成了一对空位，有助于保持晶体的电荷中性，因为尽管缺少离子，但整体电荷仍然保持平衡。肖特基空位的形成受温度的影响；随着温度的升高，空位的数量通常也会增加。这是由于增加的热能使原子更容易逃脱其晶格位置。肖特基空位的浓度可以通过阿伦尼乌斯方程来描述，该方程将空位浓度与温度及空位的形成能联系起来。理解这种关系对于半导体技术的应用至关重要，因为控制空位密度可以优化材料的性能。此外，肖特基空位在固体中的扩散过程中也发挥着重要作用。当原子在晶体结构中移动时，它们往往跳入相邻的空位。这一机制被称为空位扩散，对于陶瓷中的烧结过程以及金属在高温下的行为至关重要。肖特基空位的存在可以增强原子的迁移能力，从而影响材料的机械性能。除了对扩散和电导率的影响外，肖特基空位在材料的辐射损伤背景下也具有重要意义。当材料暴露于高能辐射（如中子或伽马射线）时，肖特基空位可能会因原子从其晶格位置的位移而形成。这可能导致用于核反应堆或太空应用的材料的结构完整性和性能发生变化。总之，研究肖特基空位提供了对材料在原子级别行为的宝贵见解。它们对电导率、扩散和抗辐射损伤能力等性质的影响突显了理解这些缺陷在各种应用中的重要性。随着技术的不断进步，对肖特基空位的进一步研究无疑将导致更好的材料和跨多个科学与工程领域的创新解决方案。