narrow bandgap semiconductor

简明释义

窄禁带半导体

英英释义

例句

1.In optoelectronics, Narrow Bandgap Semiconductors 窄带隙半导体 are crucial for developing lasers and detectors.

在光电电子学中，<顺带隙半导体>对激光器和探测器的开发至关重要。

2.Gallium antimonide is a popular Narrow Bandgap Semiconductor 窄带隙半导体 used in infrared applications.

锑化镓是一种常用的<顺带隙半导体>，用于红外应用。

3.Researchers are exploring the potential of Narrow Bandgap Semiconductor 窄带隙半导体 materials for efficient solar cells.

研究人员正在探索<顺带隙半导体>材料在高效太阳能电池中的潜力。

4.The Narrow Bandgap Semiconductor 窄带隙半导体 can emit light in the infrared range, making it useful for night vision applications.

该<顺带隙半导体>可以在红外范围内发光，使其在夜视应用中非常有用。

5.The efficiency of thermophotovoltaic devices can be enhanced using Narrow Bandgap Semiconductors 窄带隙半导体.

使用<顺带隙半导体>可以提高热光伏设备的效率。

作文

In the realm of modern electronics and optoelectronics, the term narrow bandgap semiconductor refers to a specific class of materials that possess a smaller energy gap between their valence and conduction bands. This unique characteristic enables them to absorb and emit light in the infrared region of the electromagnetic spectrum, making them invaluable in various applications such as photodetectors, lasers, and solar cells. Understanding the properties and potential of narrow bandgap semiconductors is crucial for advancing technology in fields like telecommunications, renewable energy, and medical devices.The energy bandgap of a semiconductor determines its electrical conductivity and optical properties. In general, semiconductors with a bandgap of less than 1.1 eV are classified as narrow bandgap semiconductors. Examples include materials like indium antimonide (InSb), lead sulfide (PbS), and mercury cadmium telluride (HgCdTe). These materials can efficiently convert thermal energy into electrical energy, which is particularly useful in infrared sensors and cameras.One of the most significant advantages of narrow bandgap semiconductors is their ability to operate at elevated temperatures. Traditional semiconductors, such as silicon, have higher bandgaps and therefore require cooling systems to maintain efficiency in high-temperature environments. In contrast, narrow bandgap semiconductors can function effectively without extensive cooling, making them ideal for applications in harsh conditions.Moreover, the tunability of the bandgap in these semiconductors allows for the engineering of devices tailored to specific wavelengths of light. For instance, by adjusting the composition of a narrow bandgap semiconductor, researchers can create materials that are sensitive to particular infrared wavelengths, enhancing the performance of detectors used in night vision equipment or environmental monitoring systems.The integration of narrow bandgap semiconductors into solar cell technology has also gained attention. These materials can absorb a broader spectrum of sunlight compared to conventional silicon-based solar cells, leading to improved efficiency in converting sunlight into electricity. This capability is particularly beneficial in regions with low light levels or during cloudy weather, where traditional solar cells may underperform.However, there are challenges associated with the use of narrow bandgap semiconductors. The fabrication processes can be complex and costly, and the stability of these materials under various environmental conditions needs to be thoroughly investigated. Additionally, issues related to the toxicity of some compounds, such as cadmium in mercury cadmium telluride, raise concerns about their long-term sustainability and environmental impact.In conclusion, narrow bandgap semiconductors represent a fascinating and essential area of research within the field of materials science and engineering. Their unique properties open up numerous possibilities for innovative applications across various industries. As technology continues to advance, it is likely that we will see an increased focus on optimizing these materials for enhanced performance and sustainability. By addressing the challenges associated with their use, researchers can unlock the full potential of narrow bandgap semiconductors, paving the way for future technological breakthroughs.

在现代电子和光电领域，短带隙半导体（narrow bandgap semiconductor）这个术语指的是一类具有较小的价带和导带之间能量间隙的材料。这一独特特性使它们能够在电磁波谱的红外区域吸收和发射光，使其在光电探测器、激光器和太阳能电池等各种应用中变得不可或缺。理解narrow bandgap semiconductors的性质和潜力对于推动电信、可再生能源和医疗设备等领域的技术进步至关重要。半导体的能带隙决定了其电导率和光学特性。一般来说，带隙小于1.1电子伏特的半导体被归类为narrow bandgap semiconductors。例如，铟锑（InSb）、硫化铅（PbS）和汞镉碲（HgCdTe）等材料。这些材料能够有效地将热能转化为电能，这在红外传感器和相机中尤其有用。narrow bandgap semiconductors的一个显著优势是它们能够在高温环境下工作。传统半导体，如硅，具有较高的带隙，因此需要冷却系统以维持在高温环境中的效率。相比之下，narrow bandgap semiconductors能够在没有大量冷却的情况下有效运作，使其在恶劣条件下的应用中显得尤为理想。此外，这些半导体中带隙的可调性允许对特定波长的光进行工程设计。例如，通过调整narrow bandgap semiconductor的成分，研究人员可以创建对特定红外波长敏感的材料，从而增强夜视设备或环境监测系统中探测器的性能。短带隙半导体在太阳能电池技术中的整合也引起了关注。这些材料能够吸收比传统硅基太阳能电池更广泛的阳光光谱，从而提高将阳光转化为电能的效率。这一能力在光线不足或阴天的地区尤其有利，因为传统太阳能电池可能表现不佳。然而，使用narrow bandgap semiconductors也面临一些挑战。制造过程可能复杂且成本高昂，同时这些材料在各种环境条件下的稳定性需要彻底调查。此外，某些化合物（如汞镉碲中的镉）的毒性问题也引发了对其长期可持续性和环境影响的担忧。总之，narrow bandgap semiconductors代表了材料科学和工程领域一个迷人且重要的研究领域。它们的独特性质为各行业的创新应用开辟了无数可能性。随着技术的不断进步，我们很可能会看到越来越多的关注集中在优化这些材料以提高性能和可持续性上。通过解决与其使用相关的挑战，研究人员可以释放narrow bandgap semiconductors的全部潜力，为未来的技术突破铺平道路。