local buried oxide isolation

简明释义

局部隐埋氧化物隔离

英英释义

例句

1.Researchers are studying the effects of local buried oxide isolation on the scalability of nanoscale transistors.

研究人员正在研究局部埋氧化物隔离对纳米尺度晶体管可扩展性的影响。

2.Engineers often rely on local buried oxide isolation to enhance device performance in integrated circuits.

工程师们常常依赖局部埋氧化物隔离来提高集成电路中的器件性能。

3.In advanced fabrication techniques, local buried oxide isolation plays a crucial role in reducing leakage currents.

在先进的制造技术中，局部埋氧化物隔离在减少漏电流方面起着至关重要的作用。

4.The use of local buried oxide isolation in semiconductor manufacturing helps to reduce parasitic capacitance.

在半导体制造中使用局部埋氧化物隔离有助于减少寄生电容。

5.The implementation of local buried oxide isolation can significantly improve the yield of silicon-on-insulator devices.

实施局部埋氧化物隔离可以显著提高绝缘体上硅器件的良率。

作文

In the realm of semiconductor technology, the term local buried oxide isolation plays a crucial role in enhancing device performance and reducing cross-talk between different components. To fully grasp the significance of this concept, it is essential to understand both its definition and its practical applications in modern electronics. local buried oxide isolation refers to a technique used to electrically isolate different regions of a semiconductor device by incorporating a layer of buried oxide material. This layer is typically made of silicon dioxide and is strategically placed beneath the surface of the semiconductor wafer. By creating this isolation, engineers can minimize interference and improve the overall functionality of the device.The importance of local buried oxide isolation becomes evident when considering the challenges faced in scaling down semiconductor devices. As transistors become smaller and more densely packed, the risk of electrical leakage and unwanted signal coupling increases. This can lead to degraded performance and reliability issues in integrated circuits. By employing local buried oxide isolation, designers can effectively mitigate these risks. The buried oxide layer acts as a barrier that prevents electrical signals from unintentionally crossing over between adjacent components, thereby enhancing signal integrity.Moreover, local buried oxide isolation is particularly beneficial in the development of advanced technologies such as CMOS (Complementary Metal-Oxide-Semiconductor) devices. In CMOS technology, both n-type and p-type transistors are used to create logic gates. The presence of a local buried oxide isolation layer allows for better control of the electrical characteristics of these transistors, leading to improved switching speeds and lower power consumption. This is especially important in battery-operated devices where energy efficiency is paramount.Additionally, local buried oxide isolation enables the creation of more complex circuit designs by allowing for the integration of multiple functions within a single chip. This is achieved by isolating different functional blocks on the same die, which helps to reduce the overall size of the device while maintaining high performance. For instance, in System-on-Chip (SoC) designs, various components such as processors, memory, and communication interfaces can coexist without interference, thanks to the effective isolation provided by local buried oxide isolation.In conclusion, the concept of local buried oxide isolation is integral to the advancement of semiconductor technology. Its ability to provide electrical isolation between different regions of a device not only enhances performance but also paves the way for the miniaturization and integration of complex functionalities in modern electronics. As the industry continues to evolve, the importance of techniques like local buried oxide isolation will undoubtedly grow, driving innovation and enabling the development of next-generation electronic devices that are faster, smaller, and more efficient.

在半导体技术领域，短语局部埋氧化物隔离在提高器件性能和减少不同组件之间的串扰方面发挥着至关重要的作用。要充分理解这一概念的重要性，必须了解它的定义及其在现代电子产品中的实际应用。局部埋氧化物隔离指的是一种通过在半导体器件中加入埋氧化物材料层来电气隔离不同区域的技术。这一层通常由二氧化硅制成，并且被战略性地放置在半导体晶圆的表面之下。通过创建这种隔离，工程师可以最小化干扰并改善器件的整体功能。当考虑到缩小半导体器件所面临的挑战时，局部埋氧化物隔离的重要性变得显而易见。随着晶体管变得更小且密度更高，电气泄漏和不必要的信号耦合的风险增加。这可能导致集成电路的性能下降和可靠性问题。通过采用局部埋氧化物隔离，设计人员可以有效地减轻这些风险。埋氧化物层充当屏障，防止电信号在相邻组件之间意外交叉，从而增强信号完整性。此外，局部埋氧化物隔离在先进技术的发展中尤其有益，例如CMOS（互补金属氧化物半导体）器件。在CMOS技术中，使用n型和p型晶体管来创建逻辑门。埋氧化物隔离层的存在使得对这些晶体管电气特性的更好控制成为可能，从而提高开关速度和降低功耗。这在电池供电的设备中尤为重要，因为能效至关重要。此外，局部埋氧化物隔离通过允许在单个芯片内集成多个功能的电路设计变得更加复杂。这是通过在同一芯片上隔离不同的功能模块来实现的，有助于在保持高性能的同时减少设备的整体尺寸。例如，在系统级芯片（SoC）设计中，处理器、内存和通信接口等各种组件可以共存而不干扰，这要归功于局部埋氧化物隔离提供的有效隔离。总之，局部埋氧化物隔离的概念是半导体技术进步的核心。它在设备不同区域之间提供电气隔离的能力，不仅提高了性能，还为现代电子产品中复杂功能的微型化和集成铺平了道路。随着行业的不断发展，像局部埋氧化物隔离这样的技术的重要性无疑会增加，推动创新并促进下一代电子设备的发展，使其更快、更小、更高效。