heavily doped region

简明释义

重掺杂区

英英释义

例句

1.During fabrication, careful control of the doping concentration is necessary to create a stable heavily doped region 重掺杂区域.

在制造过程中，需要仔细控制掺杂浓度以创建一个稳定的重掺杂区域heavily doped region。

2.To achieve efficient charge injection, engineers often design a heavily doped region 重掺杂区域 at the interface of the p-n junction.

为了实现高效的电荷注入，工程师通常在p-n结的界面设计一个重掺杂区域heavily doped region。

3.In a semiconductor device, the performance can be significantly improved by creating a heavily doped region 重掺杂区域 to enhance carrier concentration.

在半导体器件中，通过创建一个重掺杂区域heavily doped region可以显著提高性能，以增强载流子浓度。

4.The junction between the heavily doped region 重掺杂区域 and the lightly doped area is crucial for diode operation.

在二极管操作中，重掺杂区域heavily doped region与轻掺杂区域之间的接合是至关重要的。

5.The heavily doped region 重掺杂区域 in this transistor allows for a lower threshold voltage.

在这个晶体管中的重掺杂区域heavily doped region允许更低的阈值电压。

作文

In the field of semiconductor physics, the term heavily doped region refers to areas within a semiconductor material that have been intentionally infused with a high concentration of impurities, or dopants. This process is crucial for modifying the electrical properties of the semiconductor, allowing it to conduct electricity more effectively in certain conditions. Understanding the significance of a heavily doped region is essential for anyone studying electronics or working in the semiconductor industry.To begin with, doping is the process of adding specific impurities to a pure semiconductor. Common semiconductors include silicon and germanium, which are typically insulators in their pure form. By introducing dopants such as phosphorus or boron, we can create regions within the semiconductor that either have an excess of electrons (n-type) or a deficit of electrons (p-type). A heavily doped region is characterized by a significantly higher concentration of these dopants compared to other areas of the semiconductor.The creation of a heavily doped region serves multiple purposes in electronic devices. For instance, in bipolar junction transistors (BJTs), the emitter region is often heavily doped to ensure that it can inject a large number of charge carriers into the base region. This injection is essential for the transistor's operation, allowing it to amplify signals efficiently. Without a heavily doped region, the performance of such devices would be severely limited.Moreover, the presence of a heavily doped region can also influence the junction properties between different semiconductor materials. When a heavily doped n-type region meets a p-type region, a p-n junction is formed. The characteristics of this junction, including its depletion width and barrier potential, are significantly affected by the doping levels of the regions involved. Therefore, understanding how to create and manipulate heavily doped regions is critical for designing efficient semiconductor devices.Additionally, the fabrication of integrated circuits relies heavily on the precise control of doping concentrations. Engineers must ensure that heavily doped regions are created in specific locations to achieve desired electrical characteristics. This precision is vital for the performance of modern electronics, where millions of transistors may be integrated onto a single chip.In conclusion, the term heavily doped region is fundamental to the understanding of semiconductor technology. It describes areas within a semiconductor that have been modified to enhance their electrical properties through the introduction of high concentrations of dopants. This concept plays a pivotal role in the operation of various electronic components and is essential for the development of advanced technologies. As electronics continue to evolve, the importance of mastering the principles surrounding heavily doped regions will only grow, underscoring the need for continued research and education in this field.

在半导体物理领域，术语重掺杂区域是指在半导体材料中故意注入高浓度杂质或掺杂剂的区域。这个过程对于修改半导体的电气特性至关重要，使其在某些条件下能够更有效地导电。理解重掺杂区域的重要性对于任何研究电子学或在半导体行业工作的人来说都是必不可少的。首先，掺杂是将特定杂质添加到纯半导体中的过程。常见的半导体包括硅和锗，它们在纯形式下通常是绝缘体。通过引入如磷或硼等掺杂剂，我们可以在半导体中创建具有过量电子（n型）或缺乏电子（p型）的区域。重掺杂区域的特征是与半导体的其他区域相比，这些掺杂剂的浓度显著较高。创建重掺杂区域在电子设备中有多种目的。例如，在双极结晶体管（BJT）中，发射区通常被重掺杂，以确保它能够向基区注入大量的载流子。这种注入对晶体管的操作至关重要，使其能够有效地放大信号。如果没有重掺杂区域，此类设备的性能将受到严重限制。此外，重掺杂区域的存在也会影响不同半导体材料之间的结特性。当一个重掺杂的n型区域与p型区域相遇时，就形成了p-n结。这个结的特性，包括耗尽宽度和势垒电位，受所涉及区域的掺杂水平的显著影响。因此，理解如何创建和操纵重掺杂区域对于设计高效的半导体设备至关重要。此外，集成电路的制造在很大程度上依赖于对掺杂浓度的精确控制。工程师必须确保在特定位置创建重掺杂区域以实现所需的电气特性。这种精确性对于现代电子产品的性能至关重要，因为可能在单个芯片上集成数百万个晶体管。总之，术语重掺杂区域是理解半导体技术的基础。它描述了通过引入高浓度掺杂剂来增强半导体内部电气特性的区域。这个概念在各种电子元件的操作中发挥着关键作用，对于先进技术的发展至关重要。随着电子产品的不断发展，掌握围绕重掺杂区域的原理的重要性只会增加，强调了在这一领域继续研究和教育的必要性。