grain boundary recombination

简明释义

晶粒边界复合

英英释义

例句

1.Simulation studies indicate that grain boundary recombination (晶界复合) significantly affects charge carrier dynamics.

模拟研究表明，晶界复合显著影响载流子的动态。

2.To enhance the performance of LEDs, it's crucial to reduce grain boundary recombination (晶界复合) in the active layer.

为了提高LED的性能，减少活性层中的晶界复合至关重要。

3.The presence of impurities can increase grain boundary recombination (晶界复合) rates in metallic materials.

杂质的存在可能会增加金属材料中的晶界复合速率。

4.The efficiency of solar cells can be improved by minimizing grain boundary recombination (晶界复合) in the semiconductor material.

通过最小化晶界复合，可以提高太阳能电池的效率。

5.Researchers are studying the effects of temperature on grain boundary recombination (晶界复合) in polycrystalline silicon.

研究人员正在研究温度对多晶硅中晶界复合的影响。

作文

Grain boundaries are crucial interfaces in polycrystalline materials, where different crystalline orientations meet. These boundaries play a significant role in determining the physical properties of materials, including their electrical and thermal conductivity. One important phenomenon that occurs at these boundaries is grain boundary recombination, which refers to the process by which charge carriers, such as electrons and holes, recombine at the grain boundaries. This process can significantly influence the performance of semiconductors and other materials used in electronic devices.Understanding grain boundary recombination is essential for researchers and engineers working in fields like materials science and electronics. When charge carriers reach a grain boundary, they can either pass through or recombine, depending on the characteristics of the boundary and the material itself. If recombination occurs, it can lead to a decrease in the overall efficiency of devices, such as solar cells or transistors, where maximizing the flow of charge carriers is critical.The rate of grain boundary recombination is influenced by several factors, including the nature of the grain boundary, the presence of defects, and the temperature of the material. For instance, boundaries that are rich in defects tend to facilitate higher rates of recombination, reducing the material's conductivity. Conversely, well-defined and clean grain boundaries may allow for better charge carrier transport, minimizing recombination losses.Researchers have been investigating various methods to control grain boundary recombination to enhance material performance. Techniques such as doping, annealing, and grain boundary engineering have shown promise in optimizing the properties of materials. By manipulating the microstructure of a material, scientists can create grain boundaries that either suppress or enhance recombination, thereby improving the efficiency of electronic devices.In conclusion, grain boundary recombination is a fundamental concept in the study of materials, particularly those used in electronic applications. Understanding this process allows for the development of more efficient devices by minimizing recombination losses. As technology continues to advance, further research into the mechanisms governing grain boundary recombination will be vital in pushing the boundaries of what is possible in materials science and engineering.

晶界是多晶材料中至关重要的界面，不同的晶体取向在这里相遇。这些界面在决定材料的物理特性方面发挥着重要作用，包括它们的电导率和热导率。在这些界面上发生的一个重要现象是晶界复合，指的是电荷载流子（如电子和空穴）在晶界处复合的过程。这个过程可以显著影响半导体和其他用于电子设备的材料的性能。理解晶界复合对材料科学和电子学领域的研究人员和工程师至关重要。当电荷载流子到达晶界时，它们可以通过晶界或复合，这取决于边界的特性和材料本身。如果发生复合，可能导致设备的整体效率下降，例如在太阳能电池或晶体管中，最大化电荷载流子的流动是至关重要的。晶界复合的速率受多个因素的影响，包括晶界的性质、缺陷的存在以及材料的温度。例如，富含缺陷的边界往往会促进更高的复合速率，从而降低材料的导电性。相反，定义良好且干净的晶界可能允许更好的电荷载流子运输，最小化复合损失。研究人员一直在探索控制晶界复合以增强材料性能的各种方法。掺杂、退火和晶界工程等技术在优化材料特性方面显示出希望。通过操控材料的微观结构，科学家可以创建抑制或增强复合的晶界，从而提高电子设备的效率。总之，晶界复合是材料研究中的一个基本概念，特别是在电子应用中。理解这一过程使得通过最小化复合损失来开发更高效的设备成为可能。随着技术的不断进步，进一步研究支配晶界复合的机制将对推动材料科学和工程领域的可能性至关重要。