epitaxially grown junction

简明释义

外延结

英英释义

例句

1.The performance of lasers can be significantly improved by using epitaxially grown junction 外延生长结 structures.

通过使用<顺序>epitaxially grown junction <顺序>外延生长结结构，可以显著提高激光器的性能。

2.Our team has successfully fabricated an epitaxially grown junction 外延生长结 that exhibits superior thermal stability.

我们的团队成功制造了一个具有优越热稳定性的<顺序>epitaxially grown junction <顺序>外延生长结。

3.The researchers developed a new semiconductor device utilizing an epitaxially grown junction 外延生长结 to enhance its efficiency.

研究人员开发了一种新型半导体器件，利用<顺序>epitaxially grown junction <顺序>外延生长结来提高其效率。

4.In this study, we will investigate the properties of epitaxially grown junction 外延生长结 for photovoltaic applications.

在这项研究中，我们将调查<顺序>epitaxially grown junction <顺序>外延生长结在光伏应用中的特性。

5.The epitaxially grown junction 外延生长结 allows for better charge carrier mobility in the device.

<顺序>epitaxially grown junction <顺序>外延生长结使得器件中的载流子迁移率更好。

作文

In the realm of semiconductor physics and materials science, the concept of an epitaxially grown junction is pivotal for understanding how electronic devices operate at a fundamental level. An epitaxially grown junction refers to a specific type of junction formed through the process of epitaxy, where layers of material are deposited on a substrate in a highly ordered manner. This technique is crucial for fabricating high-performance semiconductor devices such as diodes, transistors, and integrated circuits.Epitaxy can be defined as the growth of a crystalline layer on a crystalline substrate, where the layer's crystal structure is oriented in a specific direction relative to the substrate. This orientation is essential for achieving desirable electronic properties. The epitaxially grown junction is typically characterized by its excellent crystallinity and minimal defects, which are critical factors that influence the performance of electronic devices.One of the most common methods used to create an epitaxially grown junction is Molecular Beam Epitaxy (MBE). In this process, beams of atoms or molecules are directed onto a heated substrate under ultra-high vacuum conditions. As these atoms condense on the substrate, they arrange themselves in a well-defined crystalline structure, forming the junction with the desired electrical characteristics. Another widely used method is Metal-Organic Chemical Vapor Deposition (MOCVD), which involves the chemical reaction of metal-organic compounds to deposit thin films of semiconductor materials.The significance of an epitaxially grown junction lies in its ability to enable the creation of heterojunctions, which are junctions formed between two different semiconductor materials. Heterojunctions are vital for the development of advanced electronic and optoelectronic devices, such as laser diodes and high-efficiency solar cells. By carefully selecting the materials and controlling the growth conditions, engineers can tailor the electronic properties of the junction to meet specific application requirements.Furthermore, the performance of an epitaxially grown junction can be optimized by adjusting parameters such as doping concentration, layer thickness, and growth temperature. These factors significantly affect charge carrier mobility and recombination rates, which ultimately determine the efficiency and speed of electronic devices. For instance, in photovoltaic applications, an optimized epitaxially grown junction can lead to higher energy conversion efficiencies, making solar panels more effective.In conclusion, the epitaxially grown junction is a cornerstone of modern semiconductor technology, enabling the production of high-quality electronic devices with superior performance. Understanding the principles of epitaxy and the characteristics of these junctions is essential for engineers and researchers working in the field of electronics. As technology continues to advance, the importance of epitaxially grown junctions will only grow, paving the way for innovations in electronics, renewable energy, and beyond.

在半导体物理和材料科学领域，外延生长接合的概念对于理解电子设备如何在基本层面上运作至关重要。外延生长接合是通过外延过程形成的一种特定类型的接合，其中材料层以高度有序的方式沉积在基底上。这项技术对于制造高性能的半导体器件，如二极管、晶体管和集成电路至关重要。外延可以定义为在晶体基底上生长晶体层，其中层的晶体结构相对于基底以特定方向取向。这种取向对于实现期望的电子特性至关重要。外延生长接合通常以其优良的结晶性和最小的缺陷为特征，这些都是影响电子设备性能的关键因素。创建外延生长接合的最常用方法之一是分子束外延（MBE）。在此过程中，原子或分子的束流在超高真空条件下指向加热的基底。当这些原子在基底上凝聚时，它们以明确的晶体结构排列，形成具有所需电特性的接合。另一种广泛使用的方法是金属有机化学气相沉积（MOCVD），该方法涉及金属有机化合物的化学反应，以沉积半导体材料的薄膜。外延生长接合的重要性在于它能够实现异质结的创建，异质结是由两种不同半导体材料形成的接合。异质结对于开发先进的电子和光电子设备至关重要，例如激光二极管和高效太阳能电池。通过精心选择材料和控制生长条件，工程师可以根据特定应用要求调整接合的电子特性。此外，通过调整掺杂浓度、层厚度和生长温度等参数，可以优化外延生长接合的性能。这些因素显著影响载流子迁移率和复合速率，最终决定电子设备的效率和速度。例如，在光伏应用中，优化的外延生长接合可以导致更高的能量转化效率，使太阳能电池板更有效。总之，外延生长接合是现代半导体技术的基石，使高质量电子设备的生产成为可能，并具有优越的性能。理解外延的原理和这些接合的特性对于在电子领域工作的工程师和研究人员至关重要。随着技术的不断进步，外延生长接合的重要性将只会增加，为电子、可再生能源等领域的创新铺平道路。