epitaxially grown film
简明释义
外延膜
英英释义
A film that is deposited on a substrate in such a way that its crystal structure is aligned with that of the underlying material. | 一种在基底上沉积的薄膜,其晶体结构与底层材料的晶体结构对齐。 |
例句
1.The epitaxially grown film was analyzed using X-ray diffraction methods.
使用X射线衍射方法对外延生长薄膜进行了分析。
2.We used a molecular beam epitaxy technique to create the epitaxially grown film.
我们使用分子束外延技术来制造外延生长薄膜。
3.In this experiment, we measured the conductivity of the epitaxially grown film at various temperatures.
在这个实验中,我们测量了不同温度下外延生长薄膜的导电性。
4.The quality of the epitaxially grown film directly affects the performance of the device.
外延生长薄膜的质量直接影响设备的性能。
5.The researchers developed a new type of semiconductor using an epitaxially grown film.
研究人员使用外延生长薄膜开发了一种新型半导体。
作文
Epitaxy is a process used in material science to grow a crystalline layer on a substrate. One of the most significant applications of this technique is the creation of an epitaxially grown film, which refers to a thin layer of material that is deposited on a crystalline substrate in such a way that it follows the same crystal structure as the underlying layer. This method is crucial for the development of various electronic and optoelectronic devices, including semiconductors, lasers, and solar cells.The importance of epitaxially grown films lies in their ability to achieve high-quality crystalline structures that are essential for the performance of modern electronic devices. When a material is grown epitaxially, it maintains the orientation and symmetry of the substrate, leading to fewer defects and better electronic properties. For instance, in the semiconductor industry, silicon wafers are commonly used as substrates for growing other materials like gallium arsenide or indium phosphide. The resulting epitaxially grown film exhibits superior electrical characteristics, making it suitable for high-speed and high-efficiency applications.Moreover, the ability to control the thickness and composition of epitaxially grown films allows researchers and engineers to design materials with tailored properties. This capability is particularly important in the field of photonics, where the interaction of light with materials can be finely tuned by altering the layer structure. For example, quantum wells, which are used in lasers and light-emitting diodes (LEDs), are often created using epitaxially grown films. By adjusting the number of layers and their composition, it is possible to optimize the emission wavelength and efficiency of these devices.Another significant advantage of epitaxially grown films is their compatibility with existing manufacturing processes. As the semiconductor industry continues to evolve, the integration of new materials into established fabrication techniques is crucial. Epitaxial growth methods, such as molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), allow for the seamless incorporation of novel materials without disrupting the overall production workflow. This flexibility has led to the rapid advancement of technologies such as high-electron-mobility transistors (HEMTs) and advanced photovoltaic cells.In conclusion, epitaxially grown films play a vital role in the advancement of modern technology. Their unique properties, combined with the ability to control their structure and composition, make them indispensable in the development of high-performance electronic and optoelectronic devices. As research continues to explore new materials and growth techniques, the future of epitaxially grown films looks promising, paving the way for innovations that could revolutionize various industries, from telecommunications to renewable energy.
外延生长是一种用于材料科学的工艺,用于在基底上生长晶体层。这种技术最重要的应用之一是创建外延生长薄膜,它指的是以某种方式沉积在晶体基底上的薄层材料,使其遵循与下层相同的晶体结构。该方法对于各种电子和光电设备的发展至关重要,包括半导体、激光器和太阳能电池。外延生长薄膜的重要性在于它们能够实现高质量的晶体结构,这对现代电子设备的性能至关重要。当材料以外延方式生长时,它保持基底的取向和对称性,从而减少缺陷并改善电子特性。例如,在半导体行业,硅晶圆通常用作生长其他材料(如砷化镓或磷化铟)的基底。生成的外延生长薄膜表现出优越的电气特性,使其适合于高速和高效应用。此外,控制外延生长薄膜的厚度和成分使研究人员和工程师能够设计具有定制属性的材料。这种能力在光子学领域尤为重要,通过改变层结构可以精细调节材料与光的相互作用。例如,量子阱通常使用外延生长薄膜创建,这些量子阱被广泛应用于激光器和发光二极管(LED)。通过调整层数及其成分,可以优化这些设备的发射波长和效率。外延生长薄膜的另一个显著优势是它们与现有制造过程的兼容性。随着半导体行业的不断发展,新材料与既定制造技术的集成至关重要。外延生长方法,如分子束外延(MBE)和金属有机化学气相沉积(MOCVD),允许在不干扰整体生产流程的情况下无缝地将新材料纳入。这种灵活性促进了高电子迁移率晶体管(HEMT)和先进光伏电池等技术的快速发展。总之,外延生长薄膜在现代技术进步中发挥着至关重要的作用。它们独特的性质,加上对其结构和成分的控制能力,使它们在开发高性能电子和光电设备方面不可或缺。随着研究继续探索新材料和生长技术,外延生长薄膜的未来看起来充满希望,为可能革新各个行业的创新铺平了道路,从电信到可再生能源。
相关单词