charge recombination center

简明释义

截劣复合中心

英英释义

例句

1.The presence of a charge recombination center 电荷复合中心 can significantly reduce the efficiency of solar cells.

电池中存在的charge recombination center电荷复合中心会显著降低其效率。

2.Researchers are working to minimize the effects of the charge recombination center 电荷复合中心 in organic photovoltaics.

研究人员正在努力减少有机光伏材料中charge recombination center电荷复合中心的影响。

3.A high density of charge recombination centers 电荷复合中心 can lead to poor performance in LED devices.

高密度的charge recombination centers电荷复合中心可能导致LED设备性能不佳。

4.By reducing the number of charge recombination centers 电荷复合中心, we can enhance the lifetime of the excited states in semiconductor devices.

通过减少charge recombination centers电荷复合中心的数量，我们可以提高半导体设备中激发态的寿命。

5.The study aimed to identify new materials that exhibit fewer charge recombination centers 电荷复合中心 for better conductivity.

该研究旨在识别新材料，这些材料具有更少的charge recombination centers电荷复合中心以提高导电性。

作文

In the field of semiconductor physics and materials science, understanding the behavior of charge carriers is crucial for the development of efficient electronic devices. One of the key concepts in this area is the charge recombination center, which plays a significant role in the dynamics of charge transport and recombination processes. A charge recombination center refers to a localized defect or impurity in a semiconductor material where free charge carriers, such as electrons and holes, can recombine. This process can significantly impact the performance of devices like solar cells, light-emitting diodes (LEDs), and transistors.When a semiconductor absorbs light or is subjected to an electric field, it generates electron-hole pairs. These pairs are essential for the conduction of electricity. However, if these charge carriers encounter a charge recombination center, they may recombine before they can contribute to the current flow. This recombination can lead to a reduction in the efficiency of devices, as fewer charge carriers are available to participate in conduction.The presence of charge recombination centers can be attributed to various factors, including impurities introduced during the fabrication process, structural defects, or even the intrinsic properties of the material itself. For instance, in silicon solar cells, the presence of oxygen or carbon impurities can create charge recombination centers that detrimentally affect the cell's efficiency. Understanding and controlling these centers is therefore vital for improving the performance of semiconductor devices.Researchers have dedicated considerable effort to studying the effects of charge recombination centers on device performance. Techniques such as photoluminescence spectroscopy and time-resolved microwave conductivity have been employed to investigate the dynamics of charge recombination and to quantify the impact of these centers on carrier lifetimes. By identifying and characterizing charge recombination centers, scientists can develop strategies to minimize their adverse effects, such as optimizing material purity and employing passivation techniques.Moreover, the design of new materials with reduced charge recombination centers is an active area of research. For example, perovskite solar cells have gained attention due to their high efficiency and low-cost fabrication methods. However, the presence of charge recombination centers in these materials can still limit their performance. Ongoing research aims to engineer these materials at the nanoscale to reduce defect densities and enhance charge carrier mobility, ultimately leading to better device efficiencies.In summary, the concept of the charge recombination center is fundamental in understanding the limitations of semiconductor devices. These centers represent points where charge carriers can recombine, thereby reducing the overall efficiency of devices such as solar cells and LEDs. By studying and mitigating the effects of charge recombination centers, researchers can pave the way for the development of more efficient and effective electronic devices, contributing to advancements in renewable energy and optoelectronics. As technology continues to evolve, the importance of mastering the implications of charge recombination centers will remain crucial for future innovations in the field.

在半导体物理和材料科学领域，理解电荷载流子的行为对于开发高效电子设备至关重要。这个领域的一个关键概念是电荷复合中心，它在电荷传输和复合过程的动态中起着重要作用。电荷复合中心是指半导体材料中局部缺陷或杂质，在这里，自由电荷载流子（如电子和空穴）可以复合。这个过程可能会显著影响太阳能电池、发光二极管（LED）和晶体管等设备的性能。当半导体吸收光或受到电场作用时，会产生电子-空穴对。这些对对于电流的导电至关重要。然而，如果这些电荷载流子遇到电荷复合中心，它们可能会在参与电流流动之前复合。这种复合可能导致设备效率降低，因为可用于参与导电的电荷载流子减少。电荷复合中心的存在可以归因于多种因素，包括在制造过程中引入的杂质、结构缺陷，甚至材料本身的内在特性。例如，在硅太阳能电池中，氧或碳杂质的存在可能会形成电荷复合中心，从而对电池的效率产生不利影响。因此，理解和控制这些中心对于提高半导体设备的性能至关重要。研究人员已经投入了大量精力研究电荷复合中心对设备性能的影响。光致发光光谱和时间分辨微波导电性等技术被用来研究电荷复合的动态，并量化这些中心对载流子寿命的影响。通过识别和表征电荷复合中心，科学家可以制定减少其不利影响的策略，例如优化材料纯度和采用钝化技术。此外，设计具有较少电荷复合中心的新材料也是一个活跃的研究领域。例如，钙钛矿太阳能电池因其高效和低成本的制造方法而受到关注。然而，这些材料中仍然存在的电荷复合中心可能限制其性能。正在进行的研究旨在在纳米尺度上工程化这些材料，以减少缺陷密度并增强电荷载流子的迁移率，最终提高设备效率。总之，电荷复合中心的概念对于理解半导体设备的局限性至关重要。这些中心代表了电荷载流子可以复合的点，从而降低设备（如太阳能电池和LED）的整体效率。通过研究和缓解电荷复合中心的影响，研究人员可以为开发更高效和有效的电子设备铺平道路，为可再生能源和光电子学的进步做出贡献。随着技术的不断发展，掌握电荷复合中心的影响将继续对未来的创新至关重要。