carrier recombination

简明释义

载劣复合

英英释义

例句

1.In semiconductor physics, carrier recombination refers to the process where free charge carriers, electrons and holes, combine and eliminate each other.

在半导体物理中，载流子复合指的是自由电荷载流子（电子和空穴）结合并相互消除的过程。

2.To improve device performance, engineers often seek to minimize carrier recombination in the active layers of LEDs.

为了提高设备性能，工程师们通常会努力减少LED活性层中的载流子复合。

3.High temperatures can increase carrier recombination rates, leading to decreased performance in electronic devices.

高温会增加载流子复合速率，从而导致电子设备性能下降。

4.Models that predict the behavior of semiconductors often include terms for carrier recombination to accurately simulate performance.

预测半导体行为的模型通常包括载流子复合项，以准确模拟性能。

5.The efficiency of solar cells can be significantly affected by carrier recombination, which reduces the number of charge carriers available for electricity generation.

太阳能电池的效率会受到载流子复合的显著影响，这会减少可用于发电的电荷载流子数量。

作文

In the field of semiconductor physics, the phenomenon of carrier recombination plays a crucial role in determining the electrical properties of materials. To understand this concept better, we must first define what carriers are. In semiconductors, carriers refer to charge carriers, which can be electrons or holes that facilitate the conduction of electricity. When these carriers are generated, they can move freely within the material, contributing to its conductivity. However, their movement is not always beneficial; it is essential to consider what happens when these carriers meet and interact with each other.The process of carrier recombination occurs when an electron, which is negatively charged, encounters a hole, which is positively charged. When they come together, the electron can fill the hole, effectively neutralizing both charges. This recombination process results in the loss of free carriers, which can significantly affect the conductivity of the semiconductor material. Understanding this process is vital for engineers and scientists working on electronic devices, as it directly influences the performance of transistors, diodes, and solar cells.There are two main types of carrier recombination: radiative and non-radiative recombination. Radiative recombination occurs when the energy released from the recombination of an electron and a hole is emitted in the form of light. This process is fundamental in light-emitting diodes (LEDs) and laser diodes, where the emitted light is the desired output. On the other hand, non-radiative recombination involves the transfer of energy to lattice vibrations or phonons, resulting in heat rather than light. This type of recombination can lead to energy losses in electronic devices, making it less desirable in many applications.The rate of carrier recombination is influenced by various factors, including temperature, material quality, and doping levels. Higher temperatures tend to increase the energy of the carriers, which can lead to a higher probability of recombination events. Similarly, impurities or defects in the semiconductor material can act as recombination centers, facilitating the process and reducing the overall carrier lifetime. Doping is another critical factor; by introducing specific impurities into the semiconductor, engineers can control the number of free carriers and, consequently, the recombination rates.In solar cells, carrier recombination has significant implications for efficiency. The goal of a solar cell is to generate as many free carriers as possible from absorbed sunlight and to minimize their recombination before they can be collected as electrical current. Advanced techniques, such as passivation, are employed to reduce non-radiative recombination at the surface of the solar cell, thereby enhancing its efficiency. By improving the understanding of carrier recombination, researchers can develop better materials and designs for solar energy applications.In conclusion, carrier recombination is a fundamental process in semiconductor physics that affects the performance of electronic devices. By studying this phenomenon, scientists and engineers can develop technologies that optimize carrier lifetimes and improve the efficiency of devices like LEDs, transistors, and solar cells. As the demand for advanced electronic applications continues to grow, understanding and managing carrier recombination will remain a vital area of research in the field of materials science and engineering.

在半导体物理领域，现象载流子复合在决定材料的电气特性方面起着至关重要的作用。要更好地理解这一概念，我们首先必须定义什么是载流子。在半导体中，载流子指的是电荷载流子，这可以是电子或孔，它们促进电流的导电。当这些载流子被生成时，它们可以在材料中自由移动，贡献其导电性。然而，它们的运动并不总是有益的；考虑这些载流子相遇和相互作用时发生的事情是至关重要的。载流子复合的过程发生在一个负电荷的电子遇到一个正电荷的孔时。当它们聚集在一起时，电子可以填补孔，有效地中和两个电荷。这一复合过程导致自由载流子的损失，这可能会显著影响半导体材料的导电性。理解这一过程对于从事电子设备工作的工程师和科学家至关重要，因为它直接影响晶体管、二极管和太阳能电池的性能。载流子复合主要有两种类型：辐射复合和非辐射复合。辐射复合发生在电子和孔的复合释放的能量以光的形式发射时。这一过程在发光二极管（LED）和激光二极管中是基础，其中发出的光是所需的输出。另一方面，非辐射复合涉及能量转移到晶格振动或声子中，从而导致热量而不是光。这种类型的复合可能导致电子设备中的能量损失，使其在许多应用中不太可取。载流子复合的速率受到多种因素的影响，包括温度、材料质量和掺杂水平。较高的温度往往会增加载流子的能量，这可能导致复合事件的概率增加。同样，半导体材料中的杂质或缺陷可以作为复合中心，促进该过程并减少整体载流子寿命。掺杂是另一个关键因素；通过向半导体中引入特定杂质，工程师可以控制自由载流子的数量，从而控制复合速率。在太阳能电池中，载流子复合对效率有重大影响。太阳能电池的目标是从吸收的阳光中生成尽可能多的自由载流子，并在它们可以被收集为电流之前最小化它们的复合。采用先进的技术，如钝化，来减少太阳能电池表面的非辐射复合，从而提高其效率。通过改善对载流子复合的理解，研究人员可以开发出更好的材料和设计，以用于太阳能应用。总之，载流子复合是半导体物理中的一个基本过程，影响电子设备的性能。通过研究这一现象，科学家和工程师可以开发出优化载流子寿命和提高LED、晶体管和太阳能电池等设备效率的技术。随着对先进电子应用的需求不断增长，理解和管理载流子复合将继续成为材料科学和工程领域的重要研究方向。