reverse biased heterojunction

简明释义

反向偏置异质结

英英释义

A reverse biased heterojunction refers to a junction formed between two different semiconductor materials where the voltage is applied in the opposite direction to the forward bias, resulting in a depletion region that widens and reduces the flow of charge carriers.

反向偏置异质结是指在两种不同半导体材料之间形成的结,在此情况下,施加的电压方向与正向偏置相反,导致耗尽区加宽,从而减少电荷载流子的流动。

例句

1.In solar cells, the efficiency can be improved by utilizing a reverse biased heterojunction 反向偏置异质结 to enhance charge separation.

在太阳能电池中,通过利用一个反向偏置异质结 reverse biased heterojunction 可以提高效率,以增强电荷分离。

2.A well-designed reverse biased heterojunction 反向偏置异质结 can significantly improve the performance of a laser diode.

一个设计良好的反向偏置异质结 reverse biased heterojunction 可以显著提高激光二极管的性能。

3.Researchers are exploring new materials for creating more efficient reverse biased heterojunction 反向偏置异质结 devices.

研究人员正在探索新材料,以创造更高效的反向偏置异质结 reverse biased heterojunction 设备。

4.The reverse biased heterojunction 反向偏置异质结 is essential for reducing leakage current in semiconductor devices.

在半导体设备中,反向偏置异质结 reverse biased heterojunction 对减少漏电流至关重要。

5.The reverse biased heterojunction 反向偏置异质结 plays a critical role in the operation of certain types of photodetectors.

在某些类型的光电探测器中,反向偏置异质结 reverse biased heterojunction 扮演着关键角色。

作文

The field of semiconductor physics is vast and complex, encompassing various phenomena that are crucial for the development of modern electronic devices. One such phenomenon is the formation of a reverse biased heterojunction, which plays a significant role in the operation of diodes and transistors. To better understand this concept, we must first break down the terms involved. A heterojunction refers to the interface between two different semiconductor materials, typically with varying band gaps. When these materials are brought together, they create unique electronic properties that can be exploited in various applications.In a reverse biased heterojunction configuration, the junction is subjected to a voltage that opposes the natural flow of current. This is particularly interesting because it allows for the control of charge carriers within the device. For instance, in a typical p-n junction diode, applying a reverse bias widens the depletion region, effectively preventing current from flowing. This property is utilized in photodetectors and solar cells, where the ability to control the flow of electrons is crucial.The significance of reverse biased heterojunction structures extends beyond simple current blocking. They also enable the tuning of electronic properties through the selection of materials. By choosing specific semiconductors, engineers can design devices that operate efficiently at desired wavelengths, making them ideal for applications in optoelectronics. For example, in light-emitting diodes (LEDs), the choice of materials at the heterojunction can dictate the color of the emitted light, while in laser diodes, it influences the performance and efficiency of the laser.Moreover, the understanding of reverse biased heterojunction dynamics is essential for improving device performance. Researchers are continuously exploring new materials and configurations to enhance the efficiency of devices such as solar cells. By optimizing the heterojunction structure, they can minimize losses due to recombination of charge carriers, thus maximizing the energy conversion efficiency.In practical applications, the reverse biased heterojunction is often found in integrated circuits, where multiple semiconductor materials are used to create complex functionalities on a single chip. The ability to manipulate the electrical characteristics of these junctions allows for the miniaturization of components while enhancing their performance. As technology advances, the importance of understanding and mastering the principles behind reverse biased heterojunction will only grow, paving the way for more innovative electronic solutions.In conclusion, the concept of a reverse biased heterojunction is fundamental to the understanding of modern semiconductor devices. Its ability to control charge carrier movement and influence electronic properties makes it a key area of research and application in the field of electronics. As we continue to push the boundaries of technology, the mastery of such concepts will be crucial for developing the next generation of efficient and powerful electronic devices.

半导体物理学的领域广阔而复杂,涵盖了许多对现代电子设备发展至关重要的现象。其中一个现象是形成反向偏置异质结,它在二极管和晶体管的操作中发挥着重要作用。要更好地理解这个概念,我们首先必须分解相关术语。异质结是指两种不同半导体材料之间的界面,通常具有不同的带隙。当这些材料结合在一起时,会产生独特的电子特性,这些特性可以在各种应用中加以利用。在反向偏置异质结配置中,结受到与自然电流流动相反的电压。这尤其有趣,因为它允许控制器件内的电荷载流子。例如,在典型的p-n结二极管中,施加反向偏置会扩大耗尽区,从而有效防止电流流动。这一特性被用于光探测器和太阳能电池中,其中控制电子流动的能力至关重要。反向偏置异质结结构的重要性不仅限于简单的电流阻断。它们还通过选择材料来调节电子特性。通过选择特定的半导体,工程师可以设计出在所需波长下高效运行的设备,使其在光电电子学应用中理想。例如,在发光二极管(LED)中,异质结处材料的选择可以决定发出的光的颜色,而在激光二极管中,它影响激光的性能和效率。此外,理解反向偏置异质结动态对于提高设备性能至关重要。研究人员不断探索新材料和配置,以提高太阳能电池等设备的效率。通过优化异质结结构,他们可以最小化由于电荷载流子复合造成的损失,从而最大化能量转换效率。在实际应用中,反向偏置异质结通常出现在集成电路中,其中使用多种半导体材料在单个芯片上创建复杂功能。操纵这些结的电气特性的能力使得组件的小型化成为可能,同时增强了它们的性能。随着技术的进步,理解和掌握反向偏置异质结背后的原理的重要性只会增加,为更具创新性的电子解决方案铺平道路。总之,反向偏置异质结的概念是理解现代半导体设备的基础。它控制电荷载流子运动和影响电子特性的能力使其成为电子学领域研究和应用的关键领域。随着我们继续推动技术的边界,掌握此类概念对于开发下一代高效强大的电子设备至关重要。

相关单词

biased

biased详解:怎么读、什么意思、用法